Invention Grant
- Patent Title: Memory device and operating method thereof
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Application No.: US17376411Application Date: 2021-07-15
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Publication No.: US11769565B2Publication Date: 2023-09-26
- Inventor: Seung Hyun Chung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR 20210015000 2021.02.02
- Main IPC: G11C29/36
- IPC: G11C29/36 ; G11C29/14 ; G11C29/12 ; G11C29/46

Abstract:
A memory device which can perform various memory tests without increasing a size of the memory device. The memory device includes: a first pad for receiving external ROM data from a memory controller; a second pad for receiving an external clock signal corresponding to the external ROM data from the memory controller; and a control logic connected to the first pad and the second pad and configured to perform an operation corresponding to the external ROM data in response to the external clock signal in a test mode.
Public/Granted literature
- US20220246229A1 MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2022-08-04
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