Invention Grant
- Patent Title: Replacement metal gate device structure and method of manufacturing same
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Application No.: US17165078Application Date: 2021-02-02
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Publication No.: US11769669B2Publication Date: 2023-09-26
- Inventor: Min Han Hsu , Jung-Chih Tsao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee Address: TW Hsinchu; CN Nanjing
- Agency: Hauptman Ham, LLP
- Priority: CN 2010620909.2 2020.07.01
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
The semiconductor device includes a semiconductor fin, and a gate stack over the semiconductor fin. The gate stack includes a gate dielectric layer over a channel region of the semiconductor fin, a work function material layer over the gate dielectric layer, wherein the work function material layer includes dopants, and a gate electrode layer over the work function material layer. The gate dielectric layer is free of the dopants.
Public/Granted literature
- US20220005697A1 REPLACEMENT METAL GATE DEVICE STRUCTURE AND METHOD OF MANUFACTURING SAME Public/Granted day:2022-01-06
Information query
IPC分类:
