Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US17576705Application Date: 2022-01-14
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Publication No.: US11769707B2Publication Date: 2023-09-26
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation Please
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation Please
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN 1710957371.2 2017.10.16
- The original application number of the division: US16160030 2018.10.15
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L29/66 ; H01L29/78 ; H01L21/76 ; H01L21/02 ; H01L29/06 ; H01L23/367
Abstract:
A semiconductor structure is provided. The semiconductor structure includes: a fin heat-dissipation region on a substrate; a fin channel part on the fin heat-dissipation region, and an isolation structure on the substrate. A width of the fin channel part is smaller than a width of the fin heat-dissipation region. A top surface of the isolation structure is coplanar with a top surface of the fin heat-dissipation region.
Public/Granted literature
- US20220139801A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2022-05-05
Information query
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