Invention Grant
- Patent Title: Package having different metal densities in different regions and manufacturing method thereof
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Application No.: US17684431Application Date: 2022-03-02
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Publication No.: US11769724B2Publication Date: 2023-09-26
- Inventor: Hsien-Wei Chen , Jie Chen , Ming-Fa Chen , Sen-Bor Jan
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A package has a first region and a second region surrounded by the first region. The package includes a first die, a second die, an encapsulant, and an inductor. The first die extends from the first region to the second region. The second die is bonded to the first die and is located within a span of the first die. The encapsulant is aside the second die. At least a portion of the encapsulant is located in the second region. The inductor is located in the second region. The inductor laterally has an offset from the second die. A metal density in the first region is greater than a metal density in the second region.
Public/Granted literature
- US20220246524A1 PACKAGE HAVING DIFFERENT METAL DENSITIES IN DIFFERENT REGIONS AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-08-04
Information query
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