Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17467287Application Date: 2021-09-06
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Publication No.: US11769727B2Publication Date: 2023-09-26
- Inventor: Feng-Yi Chang , Shih-Fang Tzou , Fu-Che Lee , Chien-Cheng Tsai , Feng-Ming Huang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN 1611258003.0 2016.12.30
- The original application number of the division: US15856089 2017.12.28
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L21/311 ; H01L21/768 ; H01L23/522 ; H01L21/762 ; H01L29/06 ; H10B12/00
Abstract:
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
Public/Granted literature
- US20210398902A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-12-23
Information query
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