A solid-state imaging element including a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions, an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions, a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer, a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer, and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.