Invention Grant
- Patent Title: Patterned silicon substrate-silicon germanium, thin film composite structure and preparation methods and application thereof
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Application No.: US17191333Application Date: 2021-03-03
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Publication No.: US11769799B2Publication Date: 2023-09-26
- Inventor: Jianjun Zhang , Jieyin Zhang
- Applicant: Institute of Physics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Physics, Chinese Academy of Sciences
- Current Assignee: Institute of Physics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Foley & Lardner LLP
- Priority: CN 2011276489.7 2020.11.16
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04 ; H01L29/15 ; H01L29/165
Abstract:
The present invention provides a patterned silicon substrate-silicon germanium thin film composite structure comprising a silicon substrate having a patterned structure, a silicon germanium buffer layer positioned on the silicon substrate, a silicon germanium/silicon superlattice layer positioned on the silicon germanium buffer layer and a silicon germanium thin film layer positioned on the silicon germanium/silicon superlattice layer, wherein the silicon germanium/silicon superlattice layer comprises silicon germanium layers and silicon layers which are grown alternately. The present invention also provides a preparation method of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention. The present invention also provides an application of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention in strained silicon devices. The patterned silicon substrate-silicon germanium thin film composite structure provided by the present invention has low threading dislocation density and low surface roughness. A strained silicon device fabricated based on the silicon germanium thin film layer can effectively reduce the scattering of defects to carriers, thereby improving carrier mobility.
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