Invention Grant
- Patent Title: Silicon carbide semiconductor device with cell section and outer periphery section
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Application No.: US17477168Application Date: 2021-09-16
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Publication No.: US11769801B2Publication Date: 2023-09-26
- Inventor: Yuichi Takeuchi , Ryota Suzuki , Tatsuji Nagaoka , Sachiko Aoi
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya; JP Toyota
- Agency: POSZ LAW GROUP, PLC
- Priority: JP 16240558 2016.12.12
- The original application number of the division: US16427413 2019.05.31
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/12
Abstract:
In a guard ring section of a silicon carbide semiconductor device, an electric field relaxation layer for relaxing an electric field is formed in a surface layer portion of a drift layer, so that electric field is restricted from penetrating between guard rings. Thus, an electric field concentration is relaxed. Accordingly, a SiC semiconductor device having a required withstand voltage is obtained.
Public/Granted literature
- US20220005928A1 SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2022-01-06
Information query
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