Invention Grant
- Patent Title: Method for forming source/drain contacts
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Application No.: US16871882Application Date: 2020-05-11
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Publication No.: US11769817B2Publication Date: 2023-09-26
- Inventor: Shahaji B. More , Chun Hsiung Tsai , Shih-Chieh Chang , Kuo-Feng Yu , Cheng-Yi Peng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16211451 2018.12.06
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/265 ; H01L29/167 ; H01L21/324 ; H01L21/02 ; H01L29/165 ; H01L29/45 ; H01L21/311 ; H01L21/768 ; H01L21/8234 ; H01L29/08 ; H01L21/285 ; H01L29/417 ; H01L29/78 ; H01L21/3105 ; H01L29/161
Abstract:
A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium and further includes gallium in an upper portion of the epitaxial layer that is in contact with the silicide feature.
Public/Granted literature
- US20200273963A1 Method for Forming Source/Drain Contacts Public/Granted day:2020-08-27
Information query
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