Invention Grant
- Patent Title: Semiconductor device structure with metal gate stack
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Application No.: US17135339Application Date: 2020-12-28
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Publication No.: US11769819B2Publication Date: 2023-09-26
- Inventor: Xusheng Wu , Chang-Miao Liu , Huiling Shang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US16392130 2019.04.23
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L29/66 ; H01L29/423 ; H01L21/8234 ; H01L21/28 ; H01L29/78 ; H01L27/088 ; H01L29/49 ; H01L21/265

Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a metal gate stack over the semiconductor substrate. The semiconductor device structure also includes a spacer element over a sidewall of the metal gate stack. The spacer element is doped with a dopant, and the dopant reduces a dielectric constant of the spacer element. An atomic concentration of the dopant decreases along a direction from an inner surface of the spacer element adjacent to the metal gate stack towards an outer surface of the spacer element.
Public/Granted literature
- US20210119015A1 SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK Public/Granted day:2021-04-22
Information query
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