Invention Grant
- Patent Title: Semiconductor device with change storage layer
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Application No.: US17731721Application Date: 2022-04-28
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Publication No.: US11769838B2Publication Date: 2023-09-26
- Inventor: Masaki Noguchi , Akira Takashima , Tatsunori Isogai
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 19037406 2019.03.01
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/51 ; H10B43/27 ; H10B43/35 ; H01L49/02 ; H01L23/528 ; H01L21/28
Abstract:
A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.
Public/Granted literature
- US20220254935A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-08-11
Information query
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