The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, a first doped region having a first conductivity type at a first side of the photosensitive member, wherein the first doped region is in the silicon layer, and a second doped region having a second conductivity type different from the first conductivity type at a second side of the photosensitive member opposite to the first side, wherein the second doped region is in the silicon layer, and the first doped region is apart from the second doped region, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material.