Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
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Application No.: US17721096Application Date: 2022-04-14
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Publication No.: US11770931B2Publication Date: 2023-09-26
- Inventor: Ki Hong Lee , Hwal Pyo Kim , Seung Woo Han
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR 20200021275 2020.02.20
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H01L29/423

Abstract:
A semiconductor device includes: a stack structure including insulating layers and conductive layers, which are alternately stacked; a channel structure penetrating the stack structure; data storage patterns respectively interposed between the conductive layers and the channel structure; blocking patterns respectively interposed between the conductive layers and the data storage patterns; insulating patterns respectively interposed between the insulating layers and the channel structure; and insulative liners interposed between the insulating layers and the insulating patterns, the insulative liners respectively surrounding the insulating patterns.
Public/Granted literature
- US20220246641A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2022-08-04
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