Invention Grant
- Patent Title: Methods for low-temperature p-CVD and thermal ALD of magnesium diboride
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Application No.: US16426994Application Date: 2019-05-30
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Publication No.: US11773488B2Publication Date: 2023-10-03
- Inventor: David Joseph Mandia , Angel Yanguas-Gil , Devika Choudhury , Aliraeza Nassiri , Anil U. Mane , Jeffrey W. Elam
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/38 ; C23C16/56

Abstract:
ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.
Public/Granted literature
- US20200378003A1 METHODS FOR LOW-TEMPERATURE P-CVD AND THERMAL ALD OF MAGNESIUM DIBORIDE Public/Granted day:2020-12-03
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