Invention Grant
- Patent Title: Wafer susceptor with improved thermal characteristics
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Application No.: US16594253Application Date: 2019-10-07
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Publication No.: US11773506B2Publication Date: 2023-10-03
- Inventor: Yi-Hung Lin , Jr-Hung Li , Chang-Shen Lu , Tze-Liang Lee , Chii-Horng Li
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US14471772 2014.08.28
- Main IPC: H01L21/687
- IPC: H01L21/687 ; C23C16/458 ; C30B25/12 ; B23Q3/18 ; H01L21/67 ; C23C16/46 ; C30B25/10

Abstract:
An IC fabrication system for facilitating improved thermal uniformity includes a chamber within which an IC process is performed on a substrate, a heating mechanism configured to heat the substrate, and a substrate-retaining device configured to retain the substrate in the chamber. The substrate-retaining device includes a contact surface configured to contact an edge of the retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate. The substrate-retaining device includes a plurality of contact regions and a plurality of noncontact regions disposed at a perimeter, where the plurality of noncontact regions is interspersed with the plurality of contact regions. Each of the plurality of noncontact regions includes the contact surface. Alternatively, the substrate-retaining device includes a base portion having a circular surface and a cylindrical surface extending from the circular surface, where a ring portion having the contact surface is disposed within the base portion.
Public/Granted literature
- US20200032415A1 Wafer Susceptor with Improved Thermal Characteristics Public/Granted day:2020-01-30
Information query
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