Invention Grant
- Patent Title: Transistor devices and methods for producing transistor devices
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Application No.: US17582414Application Date: 2022-01-24
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Publication No.: US11774523B2Publication Date: 2023-10-03
- Inventor: Stephan Leisenheimer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE 2018107889 2018.04.04 DE 2019103030 2019.02.07
- Main IPC: G01R33/06
- IPC: G01R33/06 ; G01R33/07 ; H01L25/065 ; H01L25/18 ; G01R15/20 ; G01R33/09
Abstract:
Transistor devices are provided. In some example implementations, a magnetic field sensor chip is fitted on a load electrode of a transistor chip. In other example implementations, two magnetic field sensors are arranged on a load electrode of a transistor chip in such a way that they measure different effective magnetic fields in the event of current flow through the transistor chip.
Public/Granted literature
- US20220146603A1 TRANSISTOR DEVICES AND METHODS FOR PRODUCING TRANSISTOR DEVICES Public/Granted day:2022-05-12
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