A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.