Invention Grant
- Patent Title: Circuit for testing memory
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Application No.: US17539216Application Date: 2021-12-01
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Publication No.: US11776648B2Publication Date: 2023-10-03
- Inventor: Sheng-Lin Lin , Chun-Yi Kuo , Shih-Chieh Lin
- Applicant: REALTEK SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT. P.C
- Priority: TW 9143281 2020.12.08
- Main IPC: G11C29/32
- IPC: G11C29/32 ; G11C29/12 ; G11C29/38

Abstract:
A test circuit for testing a memory is provided. The input of the memory is coupled to a register, and the register is coupled to a logic circuit. The test circuit includes a first test register group, a second test register group, a first multiplexer, and multiple second multiplexers. The first test register group includes at least one test register. The second test register group includes at least one test register. The first multiplexer is coupled between the first test register group and the register. The second multiplexers are coupled between the second test register group and the register.
Public/Granted literature
- US20220180956A1 Circuit for testing memory Public/Granted day:2022-06-09
Information query
IPC分类: