Invention Grant
- Patent Title: Memory device virtual blocks using half good blocks
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Application No.: US17965481Application Date: 2022-10-13
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Publication No.: US11776655B2Publication Date: 2023-10-03
- Inventor: Sri Rama Namala , Jung Sheng Hoei , Jianmin Huang , Ashutosh Malshe , Xiangang Luo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C29/18
- IPC: G11C29/18 ; G11C29/44 ; G11C29/40

Abstract:
Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).
Public/Granted literature
- US20230033870A1 MEMORY DEVICE VIRTUAL BLOCKS USING HALF GOOD BLOCKS Public/Granted day:2023-02-02
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