Invention Grant
- Patent Title: Fabrication of a semiconductor device
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Application No.: US17387625Application Date: 2021-07-28
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Publication No.: US11776809B2Publication Date: 2023-10-03
- Inventor: Markus Fabian Ritter , Fabrizio Nichele , Heinz Schmid , Heike Erika Riel
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06

Abstract:
Embodiments of the invention relate to a method for fabricating a semiconductor structure comprising a semiconductor material, and a semiconductor substrate fabricated from the method. The method can include a step of providing a template structure. The template structure can comprise an opening, a cavity and a seed structure. The seed structure can comprise a seed material and a seed surface. An inner surface of the template structure can comprise at least one metallic surface area comprising a metallic material. The embodied method further comprises a step of growing the semiconductor structure within the cavity of the template structure from the seed surface along the metallic surface area.
Public/Granted literature
- US20230033374A1 FABRICATION OF A SEMICONDUCTOR DEVICE Public/Granted day:2023-02-02
Information query
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