Invention Grant
- Patent Title: Selective deposition of carbon on photoresist layer for lithography applications
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Application No.: US17202043Application Date: 2021-03-15
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Publication No.: US11776811B2Publication Date: 2023-10-03
- Inventor: Larry Gao , Nancy Fung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: PATTERSON & SHERIDAN, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/311 ; G03F7/004 ; G03F7/20
Abstract:
A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.
Public/Granted literature
- US20210358751A1 SELECTIVE DEPOSITION OF CARBON ON PHOTORESIST LAYER FOR LITHOGRAPHY APPLICATIONS Public/Granted day:2021-11-18
Information query
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