Fin patterning to reduce fin collapse and transistor leakage

Invention Grant

US11776816B2 Fin patterning to reduce fin collapse and transistor leakage 有权

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Patent Title: Fin patterning to reduce fin collapse and transistor leakage
Application No.: US17109504

Application Date: 2020-12-02
Publication No.: US11776816B2

Publication Date: 2023-10-03
Inventor: Victor Moroz , Xi-Wei Lin
Applicant: Synopsys, Inc.
Applicant Address: US CA Mountain View
Assignee: Synopsys, Inc.
Current Assignee: Synopsys, Inc.
Current Assignee Address: US CA Sunnyvale
Agency: Park, Vaughan, Fleming & Dowler LLP
Agent Laxman Sahasrabuddhe
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/308 ; G06F30/392 ; G06F30/398 ; H01L29/66

Fin patterning to reduce fin collapse and transistor leakage

Abstract:

At least one fin structure may be created on a silicon substrate. Next, a width of the at least one fin structure may be decreased by applying one or more iterations of a self-limiting fin etch process.

Public/Granted literature

US20220172953A1 FIN PATTERNING TO REDUCE FIN COLLAPSE AND TRANSISTOR LEAKAGE Public/Granted day:2022-06-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀