Invention Grant
- Patent Title: Contact via structures of semiconductor devices
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Application No.: US17211733Application Date: 2021-03-24
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Publication No.: US11776844B2Publication Date: 2023-10-03
- Inventor: Yung Fu Chong , Rui Tze Toh , Fangyue Liu
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Anthony Canale
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L23/528

Abstract:
The embodiments herein relate to contact via structures of semiconductor devices and methods of forming the same. A semiconductor device is provided. The semiconductor device includes a substrate, a conductive feature over the substrate, and a contact via structure over and electrically coupling to the conductive feature. The contact via structure has a concave profile.
Public/Granted literature
- US20220310444A1 CONTACT VIA STRUCTURES OF SEMICONDUCTOR DEVICES Public/Granted day:2022-09-29
Information query
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