A semiconductor device and related manufacturing methods are provided. The semiconductor device includes one interconnection structure including: a substrate; a first insulating dielectric layer underneath a lower surface of the substrate; a second insulating dielectric layer on an upper surface of the substrate; a first connecting pad disposed within the first insulating dielectric layer; a metal connection member penetrating through a portion of the second insulating dielectric layer, the substrate and a portion of the first insulating dielectric layer to connect the first connecting pad; and a second connecting pad disposed within the second insulating dielectric layer and connecting the metal connection member. The metal connection member may be a Through-Silicon Via (TSV). The device includes a confined air gap surrounding the metal connection member, which improves the performance and reliability of the device.