Invention Grant
- Patent Title: Semiconductor device and electronic device
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Application No.: US16654721Application Date: 2019-10-16
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Publication No.: US11776969B2Publication Date: 2023-10-03
- Inventor: Atsushi Umezaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP 14031501 2014.02.21
- Main IPC: G11C19/00
- IPC: G11C19/00 ; H01L27/12 ; H01L29/786 ; H01L29/10 ; G11C19/28 ; G09G3/20 ; H03K19/003 ; G09G3/3266 ; G09G3/36 ; G02F1/133

Abstract:
To provide a novel shift register. Transistors 101 to 104 are provided. A first terminal of the transistor 101 is connected to a wiring 111 and a second terminal of the transistor 101 is connected to a wiring 112. A first terminal of the transistor 102 is connected to a wiring 113 and a second terminal of the transistor 102 is connected to the wiring 112. A first terminal of the transistor 103 is connected to the wiring 113 and a gate of the transistor 103 is connected to the wiring 111 or a wiring 119. A first terminal of the transistor 104 is connected to a second terminal of the transistor 103, a second terminal of the transistor 104 is connected to a gate of the transistor 101, and a gate of the transistor 104 is connected to a gate of the transistor 102.
Public/Granted literature
- US11735598B2 Semiconductor device and electronic device Public/Granted day:2023-08-22
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