Invention Grant
- Patent Title: Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry
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Application No.: US17026629Application Date: 2020-09-21
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Publication No.: US11777011B2Publication Date: 2023-10-03
- Inventor: Masihhur R. Laskar , Jeffery B. Hull , Hung-Wei Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H10B51/30
Abstract:
Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.
Public/Granted literature
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