Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17395070Application Date: 2021-08-05
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Publication No.: US11777028B2Publication Date: 2023-10-03
- Inventor: Yusuke Kobayashi , Akihiro Goryu , Ryohei Gejo , Hiro Gangi , Tomoaki Inokuchi , Shotaro Baba , Tatsuya Nishiwaki , Tsuyoshi Kachi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20205605 2020.12.11
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/06 ; H01L29/32
Abstract:
According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other-end portion. The first conductive member includes a first conductive member end portion and a first conductive member other-end portion. The first conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to fourth semiconductor regions. The first semiconductor region includes first and second partial regions. The third semiconductor region is electrically connected with the second electrode. The fourth semiconductor region is electrically connected with the first electrode. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.
Public/Granted literature
- US20220190154A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-06-16
Information query
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