Invention Grant
- Patent Title: Semiconductor structure and manufacturing method for the semiconductor structure
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Application No.: US17676695Application Date: 2022-02-21
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Publication No.: US11777031B2Publication Date: 2023-10-03
- Inventor: Chun-Yen Peng , Chih-Yu Chang , Bo-Feng Young , Te-Yang Lai , Sai-Hooi Yeong , Chi On Chui
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16799215 2020.02.24
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L29/78 ; H01L29/51 ; H01L29/66 ; H01L29/06 ; H01L21/02
Abstract:
The present disclosure provides a semiconductor device and a method for fabricating a semiconductor device. The semiconductor device includes a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer, at least a portion of the ferroelectric layer is between the metal gate layer and the substrate, wherein the ferroelectric layer includes hafnium oxide-based material, the hafnium oxide-based material includes a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.
Public/Granted literature
- US20220181495A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE Public/Granted day:2022-06-09
Information query
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