Invention Grant
- Patent Title: Hybrid complementary field effect transistor device
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Application No.: US17468001Application Date: 2021-09-07
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Publication No.: US11777034B2Publication Date: 2023-10-03
- Inventor: Ruilong Xie , Chen Zhang , Jingyun Zhang , Junli Wang , Pietro Montanini
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Samuel Waldbaum
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/786 ; H01L29/775 ; H01L29/40 ; H01L27/092 ; B82Y10/00
Abstract:
A stacked transistor device is provided. The stacked transistor device includes a nanosheet transistor device on a substrate; and a fin field effect transistor device over the nanosheet transistor device to form the stacked transistor device, wherein the fin field effect transistor device is configured to have a current flow through the fin field effect transistor device perpendicular to a current flow through the nanosheet transistor device.
Public/Granted literature
- US20230075966A1 HYBRID COMPLEMENTARY FIELD EFFECT TRANSISTOR DEVICE Public/Granted day:2023-03-09
Information query
IPC分类:
