Invention Grant
- Patent Title: Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
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Application No.: US17835317Application Date: 2022-06-08
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Publication No.: US11777060B2Publication Date: 2023-10-03
- Inventor: Noritaka Niwa , Tetsuhiko Inazu
- Applicant: NIKKISO CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: NIKKISO CO., LTD.
- Current Assignee: NIKKISO CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JP 19151151 2019.08.21
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/00 ; H01L33/38 ; H01L33/40 ; H01L33/36 ; H01L33/44

Abstract:
A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.
Public/Granted literature
- US20220320375A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2022-10-06
Information query
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