Invention Grant
- Patent Title: Semiconductor device, semiconductor device manufacturing method, and power converter
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Application No.: US17835564Application Date: 2022-06-08
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Publication No.: US11777419B2Publication Date: 2023-10-03
- Inventor: Yosuke Nakata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 21142277 2021.09.01
- Main IPC: H02M7/00
- IPC: H02M7/00 ; H01L23/29 ; H02M3/00 ; H01L23/31 ; H02M7/217 ; H02M3/155 ; H02M7/5387

Abstract:
A semiconductor device includes: a semiconductor substrate in which a cell region, an isolation region being a region which is located outward of the cell region, and a termination region including a guard ring region being located outward of the isolation region and an excess region being a region which is located outward of the guard ring region are defined; an insulating layer covering a top surface of the semiconductor substrate in the isolation region and the termination region; a surface electrode located on a portion of the top surface of the semiconductor substrate and a portion of a top surface of the insulating layer in the cell region and the isolation region; and a waterproof layer covering a portion of the insulating layer exposed from the surface electrode. The waterproof layer is spaced apart from the surface electrode.
Public/Granted literature
- US20230065822A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND POWER CONVERTER Public/Granted day:2023-03-02
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