Invention Grant
- Patent Title: Bypass circuitry to improve switching speed
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Application No.: US17660725Application Date: 2022-04-26
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Publication No.: US11777485B2Publication Date: 2023-10-03
- Inventor: Ravindranath D. Shrivastava , Simon Willard , Peter Bacon
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: PSEMI CORPORATION
- Current Assignee: PSEMI CORPORATION
- Current Assignee Address: US CA San Diego
- Agency: Steinfl + Bruno LLP
- Main IPC: H03K17/04
- IPC: H03K17/04 ; H03K17/0412
Abstract:
Methods and devices to improve the switching speed of radio frequency FET switch stacks are disclosed. The described methods and devices are based on bypassing drain-sources resistors when the FET switch stack is transitioning from an ON to an OFF state. Several implementations of the disclosed teachings are also presented.
Public/Granted literature
- US20220321113A1 BYPASS CIRCUITRY TO IMPROVE SWITCHING SPEED Public/Granted day:2022-10-06
Information query
