Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17940561Application Date: 2022-09-08
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Publication No.: US11777492B2Publication Date: 2023-10-03
- Inventor: Takayuki Teraguchi , Yosuke Ogasawara
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 21193163 2021.11.29
- Main IPC: H03K17/56
- IPC: H03K17/56

Abstract:
According to one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first end, a second end, and a first body. The second transistor includes a third end coupled to the second end, a fourth end, and a second body. The semiconductor device includes a first resistor coupled to the first end, a second resistor coupled between the first resistor and the second end, a third resistor coupled to the third end, a fourth resistor coupled between the third resistor and the fourth end, a first diode coupled between the first body and a node coupling the third resistor and the fourth resistor, and a second diode coupled between the second body and a node coupling the first resistor and the second resistor.
Public/Granted literature
- US20230170895A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-06-01
Information query
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