Invention Grant
- Patent Title: Method of manufacturing integrated circuit device
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Application No.: US17723425Application Date: 2022-04-18
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Publication No.: US11778320B2Publication Date: 2023-10-03
- Inventor: Zen-Fong Huang , Volume Chien
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H04N23/67
- IPC: H04N23/67 ; H04N23/55 ; H01L27/146

Abstract:
A photosensitive unit and a photo-insensitive unit are formed in a substrate. A lens is formed to cover the photosensitive unit and the photo-insensitive unit, and the lens has a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens. The photosensitive unit is disposed at a first side of the optical axis and the photo-insensitive unit is disposed at a second side opposite to the first side of the optical axis, a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit without being blocked, and the photosensitive unit detects the light beam while the photo-insensitive unit is ineffective in sensing the light beam. A conductive feature is formed over the substrate between the photosensitive unit and the photo-insensitive unit, wherein the optical axis of the lens passes the conductive feature.
Public/Granted literature
- US20220247936A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-08-04
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