Invention Grant
- Patent Title: Silicon carbide single crystal substrate
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Application No.: US17993200Application Date: 2022-11-23
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Publication No.: US11781246B2Publication Date: 2023-10-10
- Inventor: Kyoko Okita , Takashi Sakurada , Eiryo Takasuka , Shunsaku Ueta , Sho Sasaki , Naoki Kaji , Hidehiko Mishima , Hirokazu Eguchi
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 16022388 2016.02.09
- Main IPC: C30B29/36
- IPC: C30B29/36 ; G01N23/207 ; C30B29/64 ; C01B32/956

Abstract:
In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.
Public/Granted literature
- US20230081506A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE Public/Granted day:2023-03-16
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