Invention Grant
- Patent Title: Method and apparatus for monitoring edge bevel removal area in semiconductor apparatus and electroplating system
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Application No.: US17686317Application Date: 2022-03-03
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Publication No.: US11781995B2Publication Date: 2023-10-10
- Inventor: Chao-Tung Wu , Kuo-Chung Yu , Chung-Hao Hu , Sheng-Ping Weng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US14713409 2015.05.15
- Main IPC: G01N21/95
- IPC: G01N21/95 ; H04N7/18 ; G06T7/00 ; C25D17/00 ; C25D5/50 ; H01L21/67

Abstract:
A semiconductor apparatus includes a transfer chamber, an annealing station, a robot arm, an edge detector and a trigger device. The transfer chamber is configured to interface with an electroplating apparatus. The robot arm is arranged to transfer a wafer from the transfer chamber to the annealing station. The edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, comprises a first charge-coupled device (CCD) sensor and a second CCD sensor. When the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor and the second CCD sensor are located over a first portion and a second portion of the edge bevel removal area respectively, and the trigger device is configured to activate the first CCD sensor and the second CCD sensor to capture an image of the first portion and an image of the second portion respectively.
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