Invention Grant
- Patent Title: Fabricating planarized coil layer in contact with magnetoresistance element
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Application No.: US17648151Application Date: 2022-01-17
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Publication No.: US11782105B2Publication Date: 2023-10-10
- Inventor: Maxim Klebanov , Yen Ting Liu , Paolo Campiglio , Sundar Chetlur , Harianto Wong
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: DALY, CROWLEY, MOFFORD & DURKEE, LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G01R3/00

Abstract:
In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.
Public/Granted literature
- US20230228828A1 FABRICATING PLANARIZED COIL LAYER IN CONTACT WITH MAGNETORESISTANCE ELEMENT Public/Granted day:2023-07-20
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