Invention Grant
- Patent Title: EUV photomask and manufacturing method of the same
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Application No.: US17721758Application Date: 2022-04-15
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Publication No.: US11782338B2Publication Date: 2023-10-10
- Inventor: Feng Yuan Hsu , Tran-Hui Shen , Ching-Hsiang Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: G03F1/24
- IPC: G03F1/24

Abstract:
A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.
Public/Granted literature
- US20220236637A1 EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2022-07-28
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