Invention Grant
- Patent Title: Read-write conversion circuit and memory
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Application No.: US17445604Application Date: 2021-08-22
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Publication No.: US11783877B2Publication Date: 2023-10-10
- Inventor: Weibing Shang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: SYNCODA LLC
- Agent Feng Ma
- Priority: CN 2010505672.3 2020.06.05 CN 2021024456.9 2020.06.05
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/10 ; G11C7/06 ; G11C7/12

Abstract:
A read-write conversion circuit includes: a read-write conversion module, performing a read-write operation in response to a read-write control signal to implement data transmission between each of a local data line, a local complementary data line, and a global data line, data signals of the local data line and data signals of the local complementary data line being opposite in phase during the read-write operation, and a control module, outputting a variable read-write control signal in response to a read-write speed configuration signal to control a speed of the read-write operation of the read-write conversion module to be variable.
Public/Granted literature
- US20210383846A1 READ-WRITE CONVERSION CIRCUIT AND MEMORY Public/Granted day:2021-12-09
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