Invention Grant
- Patent Title: Method of forming semiconductor device with fin isolation
-
Application No.: US17692824Application Date: 2022-03-11
-
Publication No.: US11784055B2Publication Date: 2023-10-10
- Inventor: Chang-Yin Chen , Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US16243242 2019.01.09
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L23/31 ; H01L29/66
Abstract:
A method includes following steps. A substrate is etched using a hard mask as an etch mask to form a fin. A bottom anti-reflective coating (BARC) layer is over the fin. A recess is formed in the BARC layer to expose a first portion of the hard mask. A protective coating layer is formed at least on a sidewall of the recess in the BARC layer. A first etching step is performed to remove the first portion of the hard mask to expose a first portion of the fin, while leaving a second portion of the fin covered under the protective coating layer and the BARC layer. A second etching step is performed to lower a top surface of the first portion of the fin to below a top surface of the second portion of the fin.
Public/Granted literature
- US20220199413A1 METHOD OF FORMING SEMICONDUCTOR DEVICE WITH FIN ISOLATION Public/Granted day:2022-06-23
Information query
IPC分类:
