Invention Grant
- Patent Title: Substrate treatment apparatus and manufacturing method of semiconductor device
-
Application No.: US16950389Application Date: 2020-11-17
-
Publication No.: US11784064B2Publication Date: 2023-10-10
- Inventor: Yasuhito Yoshimizu , Yuya Akeboshi , Fuyuma Ito , Hakuba Kitagawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 17053310 2017.03.17 JP 17185305 2017.09.26 JP 18043388 2018.03.09
- The original application number of the division: US15920956 2018.03.14
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3213 ; H01L21/311
Abstract:
According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
Public/Granted literature
- US20210090913A1 SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-03-25
Information query
IPC分类:
