Invention Grant
- Patent Title: Method for etching etch layer
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Application No.: US16404533Application Date: 2019-05-06
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Publication No.: US11784065B2Publication Date: 2023-10-10
- Inventor: Manish Kumar Singh , Bo-Wei Chou , Jui-Ming Shih , Wen-Yu Ku , Ping-Jung Huang , Pi-Chun Yu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US14696973 2015.04.27
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/311
Abstract:
A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.
Public/Granted literature
- US20190259636A1 METHOD FOR ETCHING ETCH LAYER Public/Granted day:2019-08-22
Information query
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