Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16815276Application Date: 2020-03-11
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Publication No.: US11784085B2Publication Date: 2023-10-10
- Inventor: Taro Ikeda , Eiki Kamata
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 19046350 2019.03.13
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/3065 ; H01L21/67

Abstract:
A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.
Public/Granted literature
- US20200294842A1 Plasma Processing Apparatus Public/Granted day:2020-09-17
Information query
IPC分类: