Invention Grant
- Patent Title: Semiconductor device and power converter
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Application No.: US16960756Application Date: 2018-12-03
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Publication No.: US11784105B2Publication Date: 2023-10-10
- Inventor: Hodaka Rokubuichi , Seiki Hiramatsu , Shota Morisaki , Shinya Yano
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- Priority: JP 18040577 2018.03.07
- International Application: PCT/JP2018/044374 2018.12.03
- International Announcement: WO2019/171684A 2019.09.12
- Date entered country: 2020-07-08
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/495 ; H01L23/498 ; H01L23/00 ; H01L25/07 ; H01L25/18 ; H02M7/5387 ; H01L23/29 ; H02P27/08

Abstract:
A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.
Public/Granted literature
- US20200335411A1 SEMICONDUCTOR DEVICE AND POWER CONVERTER Public/Granted day:2020-10-22
Information query
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