Invention Grant
- Patent Title: Metal via structure
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Application No.: US17480824Application Date: 2021-09-21
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Publication No.: US11784120B2Publication Date: 2023-10-10
- Inventor: Yann Mignot , James J. Kelly , Muthumanickam Sankarapandian , Yongan Xu , Hsueh-Chung Chen , Daniel J. Vincent
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Joseph P. Curcuru
- The original application number of the division: US16431381 2019.06.04
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L21/311 ; H01L21/027

Abstract:
A semiconductor device includes a stack structure having at least first, second and third interconnect levels. Each interconnect level has a patterned metal conductor including a first metallic material. A via spans the second and third interconnect levels and electrically couples with the patterned metal conductor of the first interconnect level. At least a segment of the super via includes a second metallic material different from the first metallic material.
Public/Granted literature
- US20220005762A1 METAL VIA STRUCTURE Public/Granted day:2022-01-06
Information query
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