Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
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Application No.: US17183562Application Date: 2021-02-24
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Publication No.: US11784129B2Publication Date: 2023-10-10
- Inventor: Myungsam Kang , Youngchan Ko , Taesung Jeong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200099253 2020.08.07
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/498 ; H01L23/00 ; H01L21/48 ; H01L23/31

Abstract:
A semiconductor package and associated methods, the package including a substrate; first and second semiconductor chips on the substrate; and external terminals below the substrate, wherein the substrate includes a core portion; first and second buildup portions on top and bottom surfaces of the core portion, the first and second buildup portions including a dielectric pattern and a line pattern; and an interposer chip in an embedding region in the core portion and electrically connected to the first and second buildup portions, the interposer chip includes a base layer; a redistribution layer on the base layer; and a via that penetrates the base layer, the via being connected to the redistribution layer and exposed at a surface of the base layer, the redistribution layer is connected to a line pattern of the first buildup portion, and the via is connected to a line pattern of the second buildup portion.
Information query
IPC分类: