Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US17815338Application Date: 2022-07-27
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Publication No.: US11784140B2Publication Date: 2023-10-10
- Inventor: Jiun Yi Wu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US17097206 2020.11.13
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L21/48

Abstract:
A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.
Public/Granted literature
- US20220359427A1 Semiconductor Device and Method of Manufacture Public/Granted day:2022-11-10
Information query
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