Invention Grant
- Patent Title: Semiconductor device with metal film having openings
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Application No.: US17653932Application Date: 2022-03-08
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Publication No.: US11784167B2Publication Date: 2023-10-10
- Inventor: Kazuki Matsuo , Shunsuke Nitta
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21154483 2021.09.22
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00

Abstract:
A semiconductor device includes: a die pad having a top surface; a semiconductor chip provided on the top surface; a first solder provided between the top surface and the semiconductor chip, the first solder bonding the top surface and the semiconductor chip; a first metal film provided on the semiconductor chip; a first insulating film provided on the first metal film and having a first opening; a connector having a first end and a second end, the first end being provided on the first metal film in the first opening; a second metal film provided in the first opening, the second metal film having a plurality of second openings provided so as to surround a portion of the first metal film in contact with the first end, and the second metal film being provided between the first end of the connector and the portion of the first metal film; a plurality of second insulating films provided in direct contact with the first metal film in each of the second openings; and a second solder provided between the second metal film and the first end to bond the first end and the second metal film to each other.
Public/Granted literature
- US20230092204A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-03-23
Information query
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