Invention Grant
- Patent Title: Image sensor device
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Application No.: US17960028Application Date: 2022-10-04
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Publication No.: US11784199B2Publication Date: 2023-10-10
- Inventor: Chen-Hsiang Hung , Chung-Chuan Tseng , Li-Hsin Chu , Chia-Ping Lai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
Public/Granted literature
- US20230034661A1 NOVEL IMAGE SENSOR DEVICE Public/Granted day:2023-02-02
Information query
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