Invention Grant
- Patent Title: Gate air spacer protection during source/drain via hole etching
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Application No.: US17145017Application Date: 2021-01-08
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Publication No.: US11784218B2Publication Date: 2023-10-10
- Inventor: Kuo-Chiang Tsai , Jyh-Huei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66
Abstract:
A semiconductor device includes a gate disposed over a substrate. A source/drain is disposed in the substrate. A conductive contact is disposed over the source/drain. An air spacer is disposed between the gate and the conductive contact. A first component is disposed over the gate. A second component is disposed over the air spacer. The second component is different from the first component.
Public/Granted literature
- US20220223684A1 Gate Air Spacer Protection During Source/Drain Via Hole Etching Public/Granted day:2022-07-14
Information query
IPC分类:
